DMP3120L p-channel enhancem ent mode mosfet features ? low on-resistance: r ds(on) < 120m ? @ v gs = -4.5v r ds(on) < 240m ? @ v gs = -2.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss -30 v gate-source voltage v gss 12 v drain current (note 1) t a = 25c t a = 70c i d -2.8 -2.2 a drain current (note 1) pulsed i dm -9 a body-diode continuous current (note 1) i s -2.0 a thermal characteristics characteristic symbol value unit total power dissipation (note 1) p d 1.4 w thermal resistance, junction to ambient @t a = 25c (note 1) r ja 90 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb. t 5 sec. 2. no purposefully added lead. sot-23 top view equivalent circuit d g s top view source gate drain product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1 a v ds = -30v, v gs = 0v gate-body leakage i gss ? ? 100 na v gs = 12v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) -0.6 ? -1.4 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? ? ? ? 120 240 m v gs = -4.5v, i d = -2.8a v gs = -2.5v, i d = -1.8a forward transconductance g fs ? 5 ? s v ds = -5v, i d = -2.8a source-drain diode forward voltage v sd ? ? -1.1 v v gs = 0v, i s = -2.0a dynamic characteristics input capacitance c iss ? 285 ? pf v ds = -15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 56 ? pf reverse transfer capacitance c rss ? 40 ? pf gate resistance r g ? 13 ? v ds = 0v, v gs = 0v f = 1.0mhz switching characteristics turn-on delay time t d ( on ) ? 5.6 ? ns v ds = -15v, v gs = -4.5v, i d = -1a, r g = 6.0 rise time t r ? 6.8 ? turn-off delay time t d ( off ) ? 35.3 ? fall time t f ? 19.2 ? total gate charge q g ? 6.7 3.0 ? nc v ds = -15v, v gs = -10v, i d = -1.0a v ds = -15v, v gs = -4.5v, i d = -1.0a gate-source charge q gs ? 0.8 ? gate-drain charge q gd ? 0.5 ? notes: 3. short duration pulse test used to minimize self-heating effect. product specification DMP3120L sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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